Photodiodes - Page 41

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 2 nA
Capacitance:
4.9 pF
Responsivity/Photosensitivity:
0.45 to 0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: 0.04 mm2 Active Area Avalanche Photodiode with Surface Mount package
Photodetector Type:
Avalanche
Wavelength Range:
630 to 850 nm
Operation Mode:
Photovoltaic
Package Type:
Surface Mount
Module:
No
more info
Description: InGaAs Geiger mode avalanche photodiode
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
0.1 to 0.3 nA
Capacitance:
0.25 pF
Responsivity/Photosensitivity:
0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 1040 nm PD series photodiode with Chip, PCB, TO-46 Package
Photodiode Material:
Silicon
Wavelength Range:
1040 nm
Operation Mode:
Photoconductive
Dark Current:
255 pA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.2 to 0.81 A/W
Package Type:
Chip, PCB, TO-Can
Module:
No
more info
Description: 80 x 80 mils Active area PIN Silicon photodiode with Chip package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Operation Mode:
Photoconductive
Dark Current:
5 nA
Package Type:
Chip
Module:
No
more info
Description: 900 to 1700 nm KP-E Edge Illuminated InGaAs Photodiodes with Chip package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 300 pA
Capacitance:
2 to 5 pF
Responsivity/Photosensitivity:
0.5 to 0.75 A/W
Package Type:
Chip
Module:
No
more info
Description: 0.25 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
75 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 320-1100 nm, Cathode Grounded, Mounted Silicon Photodiode
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
20 to 100 nA
Capacitance:
140 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon Planar PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Package Type:
Surface Mount
Module:
No
more info
Description: UV Enhanced Response, 35.0mm2, Silicon Detector
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photovoltaic
Capacitance:
1600 pF
Responsivity/Photosensitivity:
0.14 A/W
Package Type:
TO-Can, Leaded
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 nA
Capacitance:
2.2 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
Chip
Module:
No
more info
Description: Silicon PIN Photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 1000 nm Silicon PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 750 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.7 to 2 nA
Capacitance:
2.1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
2.05 µm
Operation Mode:
Photoconductive
Dark Current:
1 µA
Capacitance:
250 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
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