Photodiodes - Page 42
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photovoltaic Devices
Description: 800 to 1700 nm Diameter InGaAs Photodiode with TO-5 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 nA
Capacitance:
250 to 450 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
more info
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 500 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
more info
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Description: 970 nm Surface Mount Photodiodes with 20 ns Rise Time
Description: 2.5 to 6.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.025 to 16 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.025 to 16 nA
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
more info
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Description: InGaAs PIN Photodiode Chip on Ceramic, Active Area 500um
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 3 nA
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
Package Type:
Chip on Ceramic
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Description: Silicon Avalanche photodiode from 550 to 1050 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
550 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 3 nA
Responsivity/Photosensitivity:
45 A/W
Package Type:
TO-Can, Ceramic, Surface Mount, Submount
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Description: Thermoelectrically Cooled InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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Description: This PIN-photodiode consists of a large chip with 1.3x1.3mm active area mounted on the TO-46 stem and is sealed with epoxy resin
Description: One Direction Position Sensing Detector
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA to 12.8 nA
Responsivity/Photosensitivity:
0.27 to 0.51 A/W
more info
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Description: Silicon Avalanche Photodiode 905 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Surface Mount
more info
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Description: AT2 Series - Two Stage Cooled PbS Packaged IR Detectors
616 - 630 of 2551 Photodiodes
Photodiode companies
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