Photodiodes - Page 39
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Tetra-Lateral PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Operation Mode:
Photovoltaic
Dark Current:
0.1 to 100 nA
Responsivity/Photosensitivity:
0.35 to 0.42 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: Array bare chip PbS near-infrared detector
Description: InGaAs PIN Photodiode 10 GHz 30 mW 1000-1650 nm - SM PM - COAXIAL
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Capacitance:
0.25 to 0.3 pF
Responsivity/Photosensitivity:
0.6 to 0.7 A/W
Package Type:
Coaxial Pigtail
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Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with Coaxial Pigtail package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 160 pA
Capacitance:
0.91 to 1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.98 A/W
Package Type:
Coaxial Pigtail
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Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
13 to 20 pF (Junction)
Responsivity/Photosensitivity:
0.18 to 0.16 A/W
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Photodiode Material:
Silicon
Wavelength Range:
Peak wavelength: 980 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
Connectorized
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Description: Chip Photodiode with Right Angle Lens
Description: InGaAs Detector, 120µm Dia, TO-46
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs PIN photodiode from 1100 to 1650 nm
Photodiode Material:
InGaAs
Wavelength Range:
1100 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
Module with Connector
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Description: 440 to 1100 nm Near-Infrared TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Responsivity/Photosensitivity:
0.52 A/W
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Description: Silicon photodiode from 700 to 1050 nm
Description: Silicon PIN photodiode from 300 to 1100 nm
Photodiode Material:
GaAIAs, Silicon
Operation Mode:
Photoconductive
Dark Current:
30 to 100 nA
Capacitance:
25 to 1000 pF
Responsivity/Photosensitivity:
0.4 mA/mW
Package Type:
Surface Mount
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Description: 220 to 320 nm GaN UV Photodiode with TO-46 Package
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
220 to 320 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 nA
Responsivity/Photosensitivity:
0.12 A/W
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571 - 585 of 2551 Photodiodes
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