Photodiodes - Page 35
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: InGaAs Photodiode, 2.5 ns Rise Time, 800-1700 nm, Ø0.5 mm Active Area
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.7 to 2 nA
Responsivity/Photosensitivity:
0.57 A/W
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Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: 900 to 1700 nm Diameter InGaAs Photodiode with 1 Diameter
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 4 nA
Capacitance:
75 to 100 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
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Description: 2 to 12 µm HgCdTe ambient temperature photovoltaic multiple junction detector
Description: 750 to 1750 nm InGaAs PIN Photodiodes with 0.1 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
750 to 1750 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.37 A/W
Package Type:
DIP / DIL / Thru-Hole
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Description: Receptacle InGaAs PIN photodiodes, 5.0GHz cut-off frequency, SC/UPC connector
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Module with Connector
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Thermoelectrically Cooled Extended InGaAs Photodiodes
Description: This PIN-photodiode consists of a large chip with 1.6x1.6mm active area mounted on the TO-18 stem and is sealed with epoxy resin
Description: UV-B Sensor
Photodetector Type:
Schottky
Photodiode Material:
AlGaN
Wavelength Range:
240 to 320 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.11 A/W
Package Type:
Surface Mount
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Description: Position Sensing Detector Array
Description: Silicon photodiode from 330 to 720 nm
511 - 525 of 2551 Photodiodes
Photodiode companies
../../56photodiodesPhotodiodessphotodetector_type:expand,sphotodiode_material:expand,spackage_type:expand,soperation_mode:expand,soptical_connector:collapsed,srf_connector:collapsed,sschannels:expand,ssconfiguration:expand,stags:expandsphotodetector_type:single,sphotodiode_material:multiple,spackage_type:multiple,soperation_mode:single,soptical_connector:single,srf_connector:single,sschannels:single,ssconfiguration:single,stags:singlesphotodetector_type:Photodetector Type,sphotodiode_material:Photodiode Material,spackage_type:Package Type,soperation_mode:Operation Mode,soptical_connector:Optical Connector,srf_connector:RF Connector,sschannels:Channels,ssconfiguration:Configuration,stags:Tagsswavelength_range:expand,scapacitance:expand,sphotosensitivity:expand,sdetector_dark_current:expandswavelength_range:3489,scapacitance:3540,sphotosensitivity:3524,sdetector_dark_current:3533{"sphotodetector_type":"or","sphotodiode_material":"or","spackage_type":"or","soperation_mode":"or","swavelength_range":"or","soptical_connector":"or","scapacitance":"or","sphotosensitivity":"or","srf_connector":"or","sdetector_dark_current":"or","sschannels":"or","ssconfiguration":"or","stags":"or"}swavelength_range:nm,scapacitance:pF,sphotosensitivity:A/W,sdetector_dark_current:nAno
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