Photodiodes - Page 34

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.06 to 0.1 nA
Capacitance:
1.8 pF
Responsivity/Photosensitivity:
0.45 to 0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Infrared detector PbS photoconductive detector Double encapsulated TO-package
Photodiode Material:
PbS
Wavelength Range:
2.7 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
more info
Description: InGaAs PIN Photodiode 20 GHz 10 mW 1100-1650 nm - SM PM - COAXIAL
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1100 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
0.11 to 0.15 pF
Responsivity/Photosensitivity:
0.65 to 0.7 A/W
Package Type:
Coaxial Pigtail
Configuration:
Single
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 600 pA
Capacitance:
4 to 6 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs Photodiode, 25 ns Rise Time, 800-2600 nm, Ø1.0 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photovoltaic
Dark Current:
3 µA
Capacitance:
500 pF
Responsivity/Photosensitivity:
1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 4.8 mm² active area VIS/NIR-detector Silicon-photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 20 nA
Capacitance:
8 to 50 pF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
Germanium (Ge)
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
50 µA
Capacitance:
50 to 135 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 4.8mm Semi-Lens Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
18 pF
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Normal Response, 613.0mm2, Silicon Detector
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
15 nA
Capacitance:
9500 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 600 to 1040 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
600 to 1040 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 3 nA
Capacitance:
12 pF
Package Type:
Chip
Module:
No
more info
Description: InGaAs PIN photodiode from 850 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
<3 nA
Capacitance:
13 pF
Responsivity/Photosensitivity:
>0.8 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 0.95 to 1.7 µm Near-Infrared TO-18 InGaAs Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.95 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
40 to 65 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for Power Monitoring Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 nA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 580 to 1070 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
580 to 1070 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 3 nA
Capacitance:
0.9 to 1.4 pF
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: 5.8 pF photodiode from 400 to 1100 nm
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 µA
Capacitance:
5.8 pF
Package Type:
Leaded
Module:
No
more info
Description: Silicon PIN photodiode from 740 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
740 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
13 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1300 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
4 to 7 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
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