Photodiodes - Page 33

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Nd-YAG Optimized Photodiodes
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 250 nA
Capacitance:
1 to 5 pF
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
Channels:
Quad
Module:
No
more info
Description: Fiber coupled InGaAs PIN photodiodes, SMF-28 fiber, 2.5GHz cut-off frequency, FC/APC connector
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Coaxial Pigtail
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Thermoelectrically Cooled Extended InGaAs Photodiodes
Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
1200 to 2550 nm
Operation Mode:
Photovoltaic
Dark Current:
4 to 50 nA
Capacitance:
800 pF
Responsivity/Photosensitivity:
0.9 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Ge Photodiode, 500 ns Rise Time, 800 - 1800 nm, Ø3 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 µA
Capacitance:
3250 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: This PIN-photodiode consists of a large chip with 2.0x2.0mm active area mounted on the TO-46 stem and is sealed with epoxy resin
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
18 pF
Package Type:
Chip, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
GaP, InGaAs
Wavelength Range:
800 to 1750 nm
Operation Mode:
Photovoltaic
Dark Current:
15 to 40 pA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.9 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: UV-A Sensor
Photodetector Type:
Schottky
Photodiode Material:
GaN
Wavelength Range:
240 to 370 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Responsivity/Photosensitivity:
0.14 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
15 to 25 nA
Capacitance:
25 to 70 pF
Responsivity/Photosensitivity:
0.38 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode from 400 to 700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Operation Mode:
Photovoltaic
Dark Current:
2 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
52 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: PbSe Single Channel Photodiode for IR Detection
Photodetector Type:
PIN
Photodiode Material:
PbSe
Wavelength Range:
4.3 to 4.5 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: TO-Can photodiode from 2.2 to 3.4 µm
Wavelength Range:
2.2 to 3.4 µm
Operation Mode:
Photovoltaic
Dark Current:
300 to 1000 µA
Capacitance:
800 to 1100 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 1000 to 1650 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 4 nA
Capacitance:
0.25 to 0.3 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Coaxial
Module:
No
more info
Description: 500 µm Diameter Circular Active Area Avalanche Photodiode with TO-Can package
Photodetector Type:
Avalanche
Wavelength Range:
750 to 910 nm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 2 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
38 to 49 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Si Pigtailed Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
0.4 to 1.1 µm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
1 to 40 nA
Capacitance:
0.5 to 500 pF
Responsivity/Photosensitivity:
0.2 to 0.38 A/W
Package Type:
Coaxial Pigtail
Configuration:
Single
Module:
No
more info
Description: 1040 nm PD series photodiode with Chip, PCB, Ceramic Package
Photodiode Material:
Silicon
Wavelength Range:
1040 nm
Operation Mode:
Photoconductive
Dark Current:
1500 pA
Capacitance:
340 pF
Responsivity/Photosensitivity:
0.2 to 0.81 A/W
Package Type:
Chip, PCB, Ceramic
Module:
No
more info
Description: 107 x 107 mils Active area PIN Silicon photodiode with Chip package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Operation Mode:
Photoconductive
Dark Current:
5 nA
Package Type:
Chip
Module:
No
more info
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