Photodiodes - Page 31
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Large Active Area InGaAs Quadrants
Description: Silicon Avalanche Photodiode 900 nm
Description: 12 nm - 18 nm, Photodiode for X-Ray Microscopy & XUV Spectroscopy Applications
Description: TO-Can photodiode from 3.8 to 4.2 µm
Description: Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area
Description: InGaAs PIN photodiode from 850 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.08 nA
Capacitance:
0.35 to 0.8 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
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Description: 0.2 mm2 Active Area Avalanche Photodiode with TO-Can package
Description: 1040 nm PD series photodiode with Chip, PCB, Ceramic Package
Description: 90 x 90 mils Active area PIN Silicon photodiode with Chip package
Description: Infrared detector PbS photoconductive detector Double encapsulated TO-package
Description: InGaAs PIN Photodiode 20 GHz 20 mW 1100-1650 nm - SM PM - COAXIAL
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1100 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
0.11 to 0.15 pF
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
Package Type:
Coaxial Pigtail
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Description: 400 to 1000 nm Si Photodiodes with TO-Can package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 40 pA
Capacitance:
1.2 to 1.6 pF
Responsivity/Photosensitivity:
0.35 A/W
more info
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Description: 1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 358 nm
Operation Mode:
Photoconductive
Capacitance:
70 pF (Junction)
Responsivity/Photosensitivity:
0.17 to 0.135 A/W
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Photodiode Material:
Silicon
Wavelength Range:
780 to 970 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.5 nA
Responsivity/Photosensitivity:
0.58 A/W
Package Type:
Through-Hole
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Description: High speed and sensitive PIN photodiode in a cylindrical side
view plastic package
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs PIN photodiode from 1100 to 1650 nm
Photodiode Material:
InGaAs
Wavelength Range:
1100 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
Module with Connector
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451 - 465 of 2551 Photodiodes
Photodiode companies
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