Photodiodes - Page 27
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Calibrated Si Photodiode, 350 - 1100 nm, 3.6 x 3.6 mm Active Area
Description: Silicon PIN Photodiode from 600 to 1040 nm
Description: Chip photodiode from 450 to 1050 nm
Description: Silicon PIN photodiode from 420 to 1120 nm
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Description: InGaAs PIN photodiode from 1300 to 1550 nm
Description: 1300 nm InGaAs PIN photodiode
Description: 400 to 1700 nm InGaAs Positive Sensitive Photodiode with TO-Can Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 150 nA
Capacitance:
130 to 400 pF
Responsivity/Photosensitivity:
0.26 to 1.06 A/W
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
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Description: Large Area InGaAs PIN Photodiodes diameter of active area=1.5 mm
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
300 to 450 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
Through-Hole
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Description: 700 to 1100 nm PIN Photodiodes with 50 ns Rise Time
Description: HgCdTe ambient temperature photovoltaic detector with anti-fringing technology
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 23 nA to 72 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
23 nA to 72 µA
Capacitance:
60 to 750 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
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Description: Receptacle InGaAs PIN photodiodes, 2.0GHz cut-off frequency, FC connector
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Module with Connector
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Description: 400 nm - 1000 nm, Silicon Avalanche Photodiode for Laser Scanner Applications
Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can
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391 - 405 of 2551 Photodiodes
Photodiode companies
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