Photodiodes - Page 26
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.90 A/W
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Description: 850 nm GaAs PIN Photodiode for Fiber Optic Communication Applications
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
50 to 100 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Channels:
Single, Quad, Multiple
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Description: Si photodetector (TO package)
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
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Description: 1010 nm PD series photodiode with Chip, PCB Package
Description: Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area
Description: 32 x 32 mils Active area PIN Silicon photodiode with Chip package
Description: Infrared detector PbS photoconductive detector Double encapsulated TO-package
Description: InGaAs PIN Photodiode 4 GHz 40 mW 800-1700 nm - SM PM - COAXIAL
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.1 nA
Capacitance:
0.35 to 0.8 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
Coaxial Pigtail
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Description: 900 to 1700 nm Back-Illuminated InGaAs Photodiode/Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Responsivity/Photosensitivity:
0.80 to 0.85 A/W
Package Type:
Ceramic, Surface Mount
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Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Description: 1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 358 nm
Operation Mode:
Photoconductive
Capacitance:
70 pF (Junction)
Responsivity/Photosensitivity:
0.17 to 0.135 A/W
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Description: Large Area Mounted Silicon Photodiode, 350-1100 nm, Anode Grounded
Description: High speed and high sensitive NPN silicon phototransistor molded in a standard f3 mm package.
Description: 28-Gb/s InGaAs PIN Photodiode
Description: UV Enhanced Response, 20.0mm2, Silicon Detector
Description: Silicon PIN photodiode from 390 to 800 nm
Description: InGaAs PIN photodiode from 1100 to 1650 nm
Description: 320 to 1000 nm UV-VIS-NIR TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 6 nA
Responsivity/Photosensitivity:
0.3 A/W
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376 - 390 of 2551 Photodiodes
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