Photodiodes - Page 24
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area, FC/PC Bulkhead
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.48 A/W
Package Type:
Through-Hole, Connectorized
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Description: Normal Response, 3.2mm2, Silicon Detector
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs PIN photodiode from 1100 to 1650 nm
Photodiode Material:
InGaAs
Wavelength Range:
1100 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
Module with Connector
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Description: 950/1300 nm Dual Sandwich Photodiode for Temperature Sensing Applications
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
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Description: 400 to 1000 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
0.5 A/W
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Description: 1000 to 1630 nm Avalanche Photodiodes with 30 to 250 nA Dark Current
Description: InGaAs, PIN Photodiode from 0.6 to 1.7 µm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
15 to 30 nA
Capacitance:
500 to 1200 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
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Description: Silicon PIN Photodiode from 430 to 1100 nm
Description: Silicon PIN photodiode from 450 to 1050 nm
Description: Silicon PIN photodiode from 700 to 1100 nm
Description: InGaAs PIN photodiode from 800 to 1700 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 100 pA
Responsivity/Photosensitivity:
0.20 to 0.55 mA/mW
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Description: 800 nm PIN Photodiode
Photodiode Material:
GaAIAs, Silicon
Operation Mode:
Photoconductive
Dark Current:
30 to 100 nA
Capacitance:
25 to 1000 pF
Responsivity/Photosensitivity:
0.40 to 0.45 mA/mW
Package Type:
Surface Mount
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
346 - 360 of 2551 Photodiodes
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