Photodiodes - Page 20

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Silicon-InGaAs Dual Sandwich Photodiode for Metal Processing Applications
Photodetector Type:
PIN
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Selective wavelength photodiode:blue
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 480 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 260 pA
Capacitance:
99 pF
Responsivity/Photosensitivity:
0.19 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 nA
Capacitance:
8 nF
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 5 mm2 Circular Photodiodes for Radiation Detection
Photodetector Type:
PN
Wavelength Range:
0.0124 to 190 nm
Operation Mode:
Photoconductive
Capacitance:
4000 to 10000 pF
Responsivity/Photosensitivity:
0.1 to 0.45 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
70 to 170 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: TO-Can photodiode from 2.45 to 3.30 µm
Wavelength Range:
2.45 to 3.30 µm
Operation Mode:
Photovoltaic
Dark Current:
150 to 600 µA
Capacitance:
200 to 300 pF
Responsivity/Photosensitivity:
0.7 to 0.8 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 1260 to 1620 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photovoltaic
Package Type:
Coaxial
Module:
No
more info
Description: 0.2 mm2 Active Area Avalanche Photodiode with Surface Mount package
Photodetector Type:
Avalanche
Wavelength Range:
750 to 910 nm
Operation Mode:
Photovoltaic
Package Type:
Surface Mount
Module:
No
more info
Description: Dual Band Si/InGaAs Detector, 4 µs Rise Time, 400 - 1700 nm, Ø2.54/Ø1.5 mm
Photodetector Type:
PIN
Photodiode Material:
InGaAs, Silicon
Wavelength Range:
400 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1 nA
Capacitance:
450 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Dual
Module:
No
more info
Description: 850nm 14Gb/s GaAs PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
110 to 150 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
Chip, Die
Configuration:
Single
Channels:
Single, Quad, Multiple
Module:
No
more info
Description: 0.5mm Extended InGaAs Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 2700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
20 µA
Capacitance:
100 to 10000 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 1040 nm PD series photodiode with Chip, PCB, TO-8 Package
Photodiode Material:
Silicon
Wavelength Range:
1040 nm
Operation Mode:
Photoconductive
Dark Current:
700 pA
Capacitance:
110 pF
Responsivity/Photosensitivity:
0.2 to 0.81 A/W
Package Type:
Chip, PCB, TO-Can
Module:
No
more info
Description: 90 x 90 mils Active area PIN Silicon photodiode with Chip package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Operation Mode:
Photoconductive
Dark Current:
5 nA
Package Type:
Chip
Module:
No
more info
Description: Array module PbS near-infrared detector
Photodiode Material:
PbS
Wavelength Range:
2.7 µm
Operation Mode:
Photovoltaic
Package Type:
Bare Chip
Configuration:
Array
more info
Description: Fiber-Coupled APD 3 GHz 800-1650 nm - SM PM MM - COAXIAL DIL BTF
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 3 nA
Capacitance:
0.38 to 0.8 pF
Responsivity/Photosensitivity:
10 to 20 A/W
Package Type:
DIL, Coaxial Pigtail
Configuration:
Single
more info
Description: 400 to 1000 nm (Silicon), 900 to 1700 nm (InGaAs) KP-2 Two-tone Photodiodes with Surface Mount package
Photodiode Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Wavelength Range:
400 to 1000 nm (Silicon), 900 to 1700 nm (InGaAs)
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA (Silicon), 1 to 10 nA (InGaAs)
Capacitance:
30 to 50 pF (Silicon), 45 to 60 pF (InGaAs)
Responsivity/Photosensitivity:
0.5 to 0.6 A/W (Silicon), 0.8 to 0.9 A/W (InGaAs)
Package Type:
Surface Mount
Module:
No
more info
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
222 to 392 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
10 pF (Junction)
Responsivity/Photosensitivity:
95 to 190 mA/W
Package Type:
TO-Can
Module:
No
more info
Description: 200 µm Aura Noiseless InGaAs Avalanche Photodiode with Surface Mount Package
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1050 to 1650 nm
Operation Mode:
Photovoltaic
Package Type:
Surface Mount
Module:
No
more info
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