Photodiodes - Page 19
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 0.95 µm - 1.65 µm, InGaAs Avalanche Photodiode for LiDAR Applications
Photodiode Material:
GaAIAs, Silicon
Operation Mode:
Photoconductive
Dark Current:
30 to 100 nA
Capacitance:
25 to 1000 pF
Responsivity/Photosensitivity:
0.45 mA/mW
Package Type:
Surface Mount
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Description: Fiber coupled InGaAs PIN photodiode
Description: 120 to 1000 nm Silicon Large Area Avalanche Photodiode (LAAPD)
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
700 nm (120 to 1000 nm)
Operation Mode:
Photovoltaic
Capacitance:
130 pF (Terminal)
Responsivity/Photosensitivity:
10 to 27 A/W
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Description: 400 nm to 1100 nm / 950 nm - 1100 nm, Dual Sandwich Photodiode for Sensing Applications
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm (Silicon)/950 to 1100 nm (Silicon)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.45 A/W (Silicon)/0.12 A/W (Silicon)
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Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Description: Large Area InGaAs PIN Photodiodes diameter of active area=5 mm
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Capacitance:
2000 to 3500 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Through-Hole
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Description: 350 to 1100 nm PIN Photodiodes with 8.1 mm Active Area
Description: Calibrated InGaAs Photodiode, 800 - 1700 nm, Ø2.0 mm Active Area
Description: InGaAs, PIN Photodiode from 1260 to 1620 nm
Description: 2 to 12 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.01 to 26 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 26 nA
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
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Description: Fiber coupled InGaAs PIN photodiodes, SMF-28 fiber, 2.5GHz cut-off frequency, LC/APC connector
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Coaxial Pigtail
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 100 nA
Capacitance:
30 to 120 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can
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Description: This PIN-photodiode consists of a large chip with 0.44x0.44mm active area mounted in a ceramic package and covered with silicone
271 - 285 of 2551 Photodiodes
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