Photodiodes - Page 15
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 320-1100 nm, Cathode Grounded, Mounted Silicon Photodiode
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
20 to 100 nA
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
Connectorized
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Description: 1000 to 1630 nm Avalanche Photodiodes with 1 to 10 nA Dark Current
Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Description: Silicon PIN Photodiode from 350 to 1120 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
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Description: TO-Can Silicon photodiode from 450 to 1050 nm
Description: Silicon PIN photodiode from 400 to 690 nm
Description: InGaAs, PIN Photodiode from 1000 to 1650 nm
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.20 to 0.50 nA
Capacitance:
0.63 to 0.75 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
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Description: 970 nm Surface Mount Photodiodes with 12 to 65 pF Capacitance
Description: 0.75 to 0.8 A/W photodiode from 1310 to 1550 nm
Description: InGaAs PIN photodiode from 1300 to 1550 nm
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 to 0.75 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
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Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.2 to 0.27 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Description: Surface Mount Photodiode from 890 nm
Description: 1550 nm Fiber-Coupled InGaAs Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 to 1.5 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
more info
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Description: 120 to 1000 nm Silicon Large Area Avalanche Photodiode with TO-Can Package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
700 nm (120 to 1000 nm)
Operation Mode:
Photovoltaic
Capacitance:
130 pF (Terminal)
Responsivity/Photosensitivity:
10 to 27 A/W
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211 - 225 of 2551 Photodiodes
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