Photodiodes - Page 12
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 970 nm Surface Mount Photodiodes with 7.25 mm Active Area
Description: 0.95 µm - 1.65 µm, InGaAs Avalanche Photodiode for LiDAR Applications
Description: Silicon PIN Photodiode from 350 to 1100 nm
Description: Silicon PIN photodiode from 880 to 1050 nm
Description: InGaAs, PIN Photodiode from 800 to 900 nm
Description: 2000 nm Coaxial photodiode
Description: InGaAs PIN photodiode from 1300 to 1550 nm
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: GaAs PIN photodiode from 770 to 860 nm
Description: 0.9 µm to 1.7 µm, InGaAs PIN Photodiode for Humidity & Gas Leak Detection Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
1800 to 2200 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
Ceramic, Chip
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Description: High speed fiber coupled photodiode
Description: 400 to 1700 nm InGaAs Positive Sensitive Photodiode with Ceramic Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 150 nA
Capacitance:
130 to 400 pF
Responsivity/Photosensitivity:
0.26 to 1.06 A/W
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: Large Area InGaAs PIN Photodiodes diameter of active area=2 mm
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
400 to 1000 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Through-Hole
more info
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Description: 350 to 1100 nm PIN Photodiodes with Surface Mount, Ceramic Package
166 - 180 of 2551 Photodiodes
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