Photodiodes - Page 10
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 350 to 1100 nm PIN Photodiodes with 75 ns Rise Time
Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 300um
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Description: Thermoelectrically Cooled Extended InGaAs Photodiodes
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Description: InGaAs, PIN Photodiode from 1250 to 1650 nm
Description: Schottky-type Photodiode from 220 to 280 nm
Photodetector Type:
Schottky
Photodiode Material:
AlGaN
Wavelength Range:
200 to 280 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.06 A/W
Package Type:
Surface Mount
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Description: Mounted UV Enhanced Silicon Photodiode, 200-1100 nm, Cathode Grounded
Description: Two-dimensional PSD
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.52 to 0.65 uA
Responsivity/Photosensitivity:
0.45 to 0.58 A/W
Package Type:
Surface Mount
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Description: Silicon Avalanche Photodiode 900 nm
Description: 3.8 µm PbSe Single-Channel IR Detector for Mid-IR Applications
Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for LiDAR & Detection Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 nA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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Description: TO-Can photodiode from 3.55 to 4.15 µm
Description: InGaAs PIN photodiode from 1100 to 1650 nm
Photodiode Material:
InGaAs
Wavelength Range:
1100 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
0.11 to 0.15 pF
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
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Description: 0.2 mm2 Active Area Avalanche Photodiode with TO-Can package
Description: 850nm 14Gb/s GaAs PIN Photodiode
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
110 to 150 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Channels:
Single, Quad, Multiple
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Description: 50um InGaAs APD Pigtailed Photodiodes
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Responsivity/Photosensitivity:
8.5 A/W
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Description: 1010 nm PD series photodiode with Chip, PCB Package
136 - 150 of 2551 Photodiodes
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