Photodiodes - Page 6
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 850nm 14Gb/s GaAs PIN Photodiode
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
110 to 150 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Channels:
Single, Quad, Multiple
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Description: Fiber coupled InGaAs photodiode module
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1650 nm
Operation Mode:
Photoconductive
Capacitance:
100 to 140 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
Module with Connector
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Description: Large Area Mounted Silicon Photodiode, 350-1100 nm, Anode Grounded
Description: 400 to 1700 nm InGaAs Positive Sensitive Photodiode with Ceramic Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
3 to 300 nA
Capacitance:
250 to 450 pF
Responsivity/Photosensitivity:
0.26 to 1.06 A/W
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 500 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
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Description: High Speed InGaAs PIN Photodiodes diameter of active area=50 µm
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 3 nA
Capacitance:
1.1 to 1.5 pF
Responsivity/Photosensitivity:
0.8 to 0.90 A/W
Package Type:
Through-Hole
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Description: InGaAs, Avalanche Photodiode from 0.95 to 1.65 µm
Description: 350 to 1100 nm PIN Photodiodes with 16 mm Active Area
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive, Photovoltaic
Capacitance:
55 to 330 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
DIP / DIL / Thru-Hole
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Description: InGaAs, PIN Photodiode from 1260 to 1620 nm
Description: InGaAs PIN Photodiode from 900 to 2400 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 2400 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 1 nA
Capacitance:
0.2 to 0.9 pF
Responsivity/Photosensitivity:
8 to 45 mA/W
Package Type:
Coaxial Pigtail
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
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Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic multiple junction detector
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.01 to 26 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 26 nA
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
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Description: Corning PM1550 Fiber coupled InGaAs PIN photodiodes, 2.5GHz cut-off frequency, FC/APC connector
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Coaxial Pigtail
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Description: 1000 to 1630 nm Avalanche Photodiodes with 1 to 10 nA Dark Current
Photodetector Type:
Avalanche
Photodiode Material:
Indium Aluminum Arsenide (InAlAs), Indium Gallium
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Capacitance:
0.08 to 0.1 pF
Responsivity/Photosensitivity:
8 to 8.5 A/W
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Thermoelectrically Cooled InGaAs Photodiodes
Description: PIN photodiode from 1100 to 1600 nm
Description: 350 to 1100 nm PIN Photodiodes with 8.1 mm Active Area
76 - 90 of 2551 Photodiodes
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