Photodiodes - Page 2
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 500 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
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Description: 7 to 65 mA/W photodiode from 1520 to 1610 nm
Description: GaAs High Voltage Photodiode
Description: 0.9 µm - 1.7 µm, InGaAs PIN Photodiode for Optical Powering Applications
Description: Surface Mount Photodiode from 890 nm
Description: InGaAs Linear Photodiode Arrays for Industrial Process Control and Thermal Imaging
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2200 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
10.5 A/W
Package Type:
DIP / DIL / Thru-Hole
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Description: Large Area Mounted Germaniµm Photodiode, 800-1800 nm, Cathode Grounded
Description: Fiber coupled InGaAs optical receiver with 4GHz bandwidt
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.8 nA
Capacitance:
0.55 to 0.8 pF
Responsivity/Photosensitivity:
0.95 to 1.05 A/W
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Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 µA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
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Description: High Speed InGaAs PIN Photodiodes diameter of active area=50 µm
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.25 to 0.4 pF
Responsivity/Photosensitivity:
0.8 to 0.90 A/W
Package Type:
Through-Hole
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Description: 350 to 1100 nm PIN Photodiodes with 16 mm Active Area
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive, Photovoltaic
Capacitance:
55 to 330 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
DIP / DIL / Thru-Hole
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Description: 350 to 1100 nm PIN Photodiodes with 8.4 mm Active Area
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
10 to 30 nA
Capacitance:
25 to 100 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
DIP / DIL / Thru-Hole
more info
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Description: InGaAs, PIN Photodiode from 1260 to 1620 nm
Description: InGaAs PIN Photodiode from 900 to 1620 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1620 nm
Operation Mode:
Photovoltaic
Dark Current:
0.2 to 1 nA
Capacitance:
0.7 to 0.9 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
Coaxial Pigtail
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Description: 1000 to 1630 nm Avalanche Photodiodes with 0.15 to 3 nA Dark Current
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Description: 800 nm - 2600 nm, InGaAs PIN Photodiode for LiDAR Applications
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA to 62 µA
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
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Description: Fiber coupled InGaAs PIN photodiodes in stock, HI1060 fiber, 2.5GHz cut-off frequency, FC/APC connector
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Coaxial Pigtail
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Description: 28 Gb/s NRZ or 56Gb/s PAM4 1X4 PIN Photodiode Array Chip
16 - 30 of 2551 Photodiodes
Photodiode companies
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