Photodiodes - Page 3
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 850nm 14Gb/s GaAs PIN Photodiode
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
110 to 150 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Channels:
Single, Quad, Multiple
more info
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Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can
more info
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Description: PIN photodiode from 1100 to 1600 nm
Description: This PIN-photodiode consists of a large chip with 0.8x0.8mm active area mounted on a lead frame with a ?5 clear epoxy lens
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: Silicon Photodiode Array Chip from 600 to 1050 nm
Photodiode Material:
Silicon
Wavelength Range:
600 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
0.35 nA to 5 µA
Responsivity/Photosensitivity:
0.5 to 0.65 A/W
more info
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Description: InGaAs PIN Photodiodes from 1250 nm to 1650 nm
Description: High Speed Photodiodes with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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Description: HgCdTe Avalanche Photodiode Array from 0.8 to 2.5 µm
Photodetector Type:
Avalanche
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
0.8 to 2.5 µm
Operation Mode:
Photovoltaic
Package Type:
Chip, Surface Mount
more info
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Description: AlGaN based UV-C Photodiode from 220 to 280 nm
Description: Silicon Photomultiplier Detector
Photodiode Material:
Silicon
Wavelength Range:
240 to 270 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 3.5 nA
Capacitance:
72 to 480 pF
Responsivity/Photosensitivity:
0.02 A/W
more info
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Description: 1000 to 1630 nm Avalanche Photodiodes with 8 to 25 nA Dark Current
Description: 4.3 µm - 4.7 µm, PbSe Photodiode for Thermal Imaging Applications
Description: TO-Can photodiode from 3.55 to 4.15 µm
Description: InGaAs Avalanche photodiode from 1000 to 1650 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 3 nA
Capacitance:
0.4 to 0.6 pF
Responsivity/Photosensitivity:
8 to 12 A/W
Package Type:
Coaxial, DIL
more info
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Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Description: 0.04 mm2 Active Area Avalanche Photodiode with Surface Mount package
Description: 850nm 25Gb/s GaAs PIN Photodiode
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
50 to 100 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Channels:
Single, Quad, Multiple
more info
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Description: Si photodetector (TO package)
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
more info
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Description: Mounted Silicon Photodiode, 200-1100 nm, Anode Grounded
31 - 45 of 2551 Photodiodes
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