Photodiodes - Page 4

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 0.95 µm - 1.65 µm, InGaAs Avalanche Photodiode for LiDAR Applications
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
8 to 9 A/W
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: 1040 nm PD series photodiode with Chip, PCB Package
Photodiode Material:
Silicon
Wavelength Range:
1040 nm
Operation Mode:
Photoconductive
Dark Current:
400 pA
Capacitance:
30 pF
Responsivity/Photosensitivity:
0.2 to 0.81 A/W
Package Type:
Chip, PCB
Module:
No
more info
Description: 17.7 x 27.6 mils Active area PIN Silicon photodiode with Chip package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Operation Mode:
Photoconductive
Dark Current:
5 nA
Package Type:
Chip
Module:
No
more info
Description: 1100 to 1620 nm Analog Coaxial Photodiode
Wavelength Range:
1100 to 1620 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 10 nA
Responsivity/Photosensitivity:
0.7 to 0.85 mA/mW
Package Type:
Coaxial Pigtail
Configuration:
Array
Module:
No
more info
Description: 1000 to 1630 nm PIN Photodiodes with 2 nA Dark Current
Photodetector Type:
PIN
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Dark Current:
2 nA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Die
Configuration:
Array
Channels:
Quad
Module:
No
more info
Description: Infrared detector PbS photoconductive detector Bondable bare chip
Photodiode Material:
PbS
Wavelength Range:
2.7 µm
Operation Mode:
Photovoltaic
Package Type:
Bare Chip
Configuration:
Single
more info
Description: InGaAs PIN Photodiode 4 GHz 10 mW 800-1700 nm - SM PM - COAXIAL
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.1 nA
Capacitance:
0.35 to 0.8 pF
Responsivity/Photosensitivity:
0.95 to 1.05 A/W
Package Type:
Coaxial Pigtail
Configuration:
Single
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
600 pA
Capacitance:
6 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 350 to 1100 nm PIN Photodiodes with Surface Mount, Ceramic Package
Photodetector Type:
PIN
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
5 to 30 nA
Capacitance:
10 to 60 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Surface Mount, Ceramic
more info
Description: 1 mm² active area VIS/NIR-detector Silicon-photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.62 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 950 nm - 1650 nm, InGaAs Avalanche Photodiode for OTDR Applications
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
950 to 1650 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Module:
No
more info
Description: Single-Photon Avalanche Diode Sensor for Raman Spectroscopy Applications
Photodetector Type:
Avalanche
Wavelength Range:
480 to 620 nm
Operation Mode:
Photovoltaic
Package Type:
Chip
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
15 to 30 nA
Capacitance:
500 to 1400 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Large Area Mounted Germaniµm Photodiode, 800-1800 nm, Cathode Grounded
Photodiode Material:
Germanium (Ge)
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
4 µA
Capacitance:
4.5 to 6 nF
Responsivity/Photosensitivity:
0.85 A/W
Package Type:
Connectorized
Module:
No
more info
Description: 4.8mm Semi-Lens Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon, GaAIAs
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
25 pF
Package Type:
Through-Hole
Module:
No
more info
Description: 32-Gb/s InGaAs, 1x4 Array PIN Photodiode with 250-µm GSG Channel Spacing
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photovoltaic
Package Type:
Die
Configuration:
Array
Channels:
Quad
Module:
No
more info
Description: 850nm 25Gb/s GaAs PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
50 to 100 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
Chip, Die
Configuration:
Array
Channels:
Single, Quad, Multiple
Module:
No
more info
Description: 350 nm - 1100 nm, Silicon Photodiode for Fluorescence Applications
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
20 to 90 pF (Junction)
Responsivity/Photosensitivity:
0.38 to 0.55 A/W
Package Type:
TO-Can
more info
Description: UV Enhanced Response, 50.0mm2, Silicon Detector
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photovoltaic
Capacitance:
2500 pF
Responsivity/Photosensitivity:
0.14 A/W
Package Type:
Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 960 nm, PIN photodiode
Photodetector Type:
PIN
Wavelength Range:
960 nm
Operation Mode:
Photovoltaic
Package Type:
Leaded
Module:
No
more info
Description: Mounted InGaAs Photodiode, 800-1700 nm, Cathode Grounded
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
50 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
1.04 A/W
Package Type:
Connectorized
Module:
No
more info
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