Photodiodes - Page 7
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Mounted Silicon Photodiode, 350-1100 nm, Cathode Grounded
Description: This PIN-photodiode consists of a large chip with 0.8x0.8mm active area mounted on a lead frame with a ?5 clear epoxy lens
Description: Silicon avalanched photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
50 to 55 A/W
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: 900 nm - 1700 nm, InGaAs/InP Avalanche Photodiode for Sensing Applications
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
0.35 to 0.5 pF
Responsivity/Photosensitivity:
0.65 to 0.94 A/W
Package Type:
TO-Can, Coaxial Pigtail
more info
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Description: Uncooled PbSe Single-Channel IR Detector for Thermal Imaging Applications
Description: TO-Can photodiode from 3.55 to 4.50 µm
Description: 0.9 µm - 1.7 µm, InGaAs PIN Photodiodes for LiDAR & Optical Powering Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
900 to 1300 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
more info
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Description: 230 µm Diameter Circular Active Area Avalanche Photodiode with TO-Can package
Photodetector Type:
Avalanche
Wavelength Range:
800 nm / 905 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.6 to 1.5 pF
Responsivity/Photosensitivity:
45 to 50 A/W
more info
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Description: 28 Gb/s NRZ or 56Gb/s PAM4 1X4 PIN Photodiode Array Chip
Description: PD1000 InGaAs Photodiode Chip
Description: 700 to 1100 nm PIN Photodiodes with DIP / DIL / Thru-Hole Package
Description: 1010 nm PD series photodiode with TO-46 Package
Photodiode Material:
Silicon
Wavelength Range:
1010 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA to 15 pA
Responsivity/Photosensitivity:
0.11 to 0.73 A/W (Schott UV-glass), 0.2 to 0.8 (No
more info
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Description: 49 x 49 mils Active area PIN Silicon photodiode with Chip package
Description: Fiber-Coupled APD 1.5 GHz 1000-1650 nm - SM PM MM - COAXIAL DIL BTF
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 1 nA
Capacitance:
0.4 to 0.6 pF
Responsivity/Photosensitivity:
8 to 12 A/W
Package Type:
DIL, Coaxial Pigtail
more info
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Description: Edge-illuminated Self-hermetic Monitor Photodiode (EMPD) Chip
Description: 900 to 1700 nm KP-R InGaAs Photodiodes for Receivers with Chip package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 200 pA
Capacitance:
0.17 to 0.35 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
more info
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Description: 2 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
150 pF (Junction)
Responsivity/Photosensitivity:
0.13 to 0.16 A/W
more info
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Description: 200 µm Aura Noiseless InGaAs Avalanche Photodiode with TO-CAN Package
Description: 1000 to 1630 nm Avalanche Photodiodes with 0.2 to 5 nA Dark Current
91 - 105 of 2551 Photodiodes
Photodiode companies
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