Photodiodes - Page 11
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 350 to 720 nm PIN Photodiodes with Surface Mount Package
Wavelength Range:
350 to 720 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
10 to 30 nA
Capacitance:
25 to 100 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Surface Mount
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Description: 90 x 90 Mils Active area PIN Silicon photodiode with Chip package
Description: Infrared detector PbS photoconductive detector Bondable bare chip
Description: 900 nm - 1700 nm, PIN Photodiode for Industrial Applications
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.4 nA
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
Coaxial Pigtail
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Photodiode Material:
Silicon
Wavelength Range:
780 to 970 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.5 nA
Responsivity/Photosensitivity:
0.58 A/W
Package Type:
Through-Hole
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Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Description: 1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 358 nm
Operation Mode:
Photoconductive
Capacitance:
70 pF (Junction)
Responsivity/Photosensitivity:
0.17 to 0.135 A/W
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Description: 950 nm - 1650 nm, InGaAs Avalanche Photodiode for Sensing Applications
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1050 to 1650 nm
Operation Mode:
Photovoltaic
Package Type:
Surface Mount
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Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for Power Monitoring Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 nA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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Description: Mounted InGaAs Photodiode, 800-1700 nm, Cathode Grounded
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.04 A/W
Package Type:
Connectorized
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Description: Silicon Planar PIN Photodiode
Description: 28-Gb/s InGaAs, 1x4 Array PIN Photodiode with 750-µm Channel Spacing
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
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Description: Normal Response, 16.4mm2, Silicon Detector
Description: 820 nm, Silicon photodiode
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs PIN photodiode from 1100 to 1650 nm
Photodiode Material:
InGaAs
Wavelength Range:
1100 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
Module with Connector
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Description: 5 mm Area, High Sensitivity Avalanche Photodiode in TO-Can Package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 130 nA
Capacitance:
85 pF (Terminal)
Responsivity/Photosensitivity:
0.44 A/W
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Description: 1000 to 1630 nm PIN Photodiodes with 2 nA Dark Current
151 - 165 of 2551 Photodiodes
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