Photodiodes - Page 13
2551 Photodiodes from 62 Manufacturers meet your specification.
Photodiode Material:
Silicon
Wavelength Range:
610 to 770 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.5 nA
Responsivity/Photosensitivity:
0.58 A/W
Package Type:
Through-Hole
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Description: InGaAs, PIN Photodiode from 1260 to 1620 nm
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 3 nA
Capacitance:
105 to 130 ff
Responsivity/Photosensitivity:
0.52 to 0.7 A/W
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Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.025 to 16 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.025 to 16 nA
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
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Description: InGaAs PIN Photodiode Chip on Ceramic, Active Area 1000um
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Responsivity/Photosensitivity:
0.88 to 0.98 A/W
Package Type:
Chip on Ceramic
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Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1100 nm
Description: Thermoelectrically Cooled InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.07 to 0.35 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
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Description: This PIN-photodiode consists of a large chip with 0.44x0.44mm active area mounted on a lead frame with a F3 clear epoxy lens
Description: 350 to 1100 nm Quadrant Backscatter Photodiodes with TO-Can Package
Description: High Speed Silicon Photodiode
Description: Silicon Avalanche Photodiode 800 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
50 A/W
Package Type:
Surface Mount
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Description: 3.8 µm Single-Channel IR Detector for Industrial Applications
Description: TO-Can photodiode from 1.65 to 2.35 µm
Description: InGaAs PIN photodiode from 1000 to 1700 nm
Description: 13 mm2 Active Area PIN Photodiode with TO-Can package
Description: 850nm 25Gb/s GaAs PIN Photodiode
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
50 to 100 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Channels:
Single, Quad, Multiple
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Description: Si Pigtailed Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
0.4 to 1.1 µm
Operation Mode:
Photoconductive, Photovoltaic
Capacitance:
0.5 to 500 pF
Responsivity/Photosensitivity:
0.2 to 0.38 A/W
Package Type:
Coaxial Pigtail
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181 - 195 of 2551 Photodiodes
Photodiode companies
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