Photodiodes - Page 18
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: InGaAs Photodiode, 17 ns Rise Time, 800-2600 nm, Ø0.5 mm Active Area
Description: Silicon PIN Photodiode for Pulse Detection Applications
Description: 960 nm, PIN photodiode
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: 350 to 1100 nm Quadrant Backscatter Photodiodes with TO-5 Package
Description: InGaAs PIN photodiode from 1100 to 1650 nm
Description: 2 mm Area, High Sensitivity Avalanche Photodiode in TO-Can Package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Capacitance:
15 pF (Terminal)
Responsivity/Photosensitivity:
0.44 A/W
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Description: 1000 to 1630 nm Avalanche Photodiodes with 1 to 10 nA Dark Current
Photodetector Type:
Avalanche
Photodiode Material:
Indium Aluminum Arsenide (InAlAs), Indium Gallium
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Capacitance:
0.08 to 0.1 pF
Responsivity/Photosensitivity:
8 to 8.5 A/W
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Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 µA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
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Description: InGaAs, Avalanche Photodiode from 0.95 to 1.65 µm
Description: Silicon PIN Photodiode from 350 to 1120 nm
Description: PIN photodiode from 400 to 1100 nm
Description: Silicon PIN photodiode from 380 to 1100 nm
Description: InGaAs PIN photodiode from 800 to 1700 nm
Description: InGaAs Avalanche photodiode from 1260 to 1620 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.75 to 0.9 mA/uW
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Description: Surface Mount Photodiode from 900 nm
256 - 270 of 2551 Photodiodes
Photodiode companies
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