Photodiodes - Page 23
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
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Description: PHOTODIODE 100 mm2 with Integrated Thin Film Filter
Description: TO-Can photodiode from 3.5 to 4.2 µm
Description: InGaAs PIN photodiode from 850 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 0.16 nA
Capacitance:
0.65 to 1.1 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
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Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 µA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
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Description: 230 µm Diameter Circular Active Area Avalanche Photodiode with Surface Mount package
Photodetector Type:
Avalanche
Wavelength Range:
635 nm / 905 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Responsivity/Photosensitivity:
30 to 32 A/W
Package Type:
Surface Mount
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Description: Edge-illuminated Self-hermetic Monitor Photodiode (EMPD) Chip
Description: Si Pigtailed Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
0.4 to 1.1 µm
Operation Mode:
Photoconductive, Photovoltaic
Capacitance:
0.5 to 500 pF
Responsivity/Photosensitivity:
0.2 to 0.38 A/W
Package Type:
Coaxial Pigtail
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Description: InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area, FC/PC Bulkhead
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.003 A/W
Package Type:
Through-Hole, Connectorized
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Description: 1040 nm PD series photodiode with Chip, PCB, TO-8 Package
Description: 95 x 95 Mils Active area PIN Silicon photodiode with Chip package
Description: Multi-Pixel bare chip PbS near-infrared detector
Description: Silicon PIN Photodiode 2 GHz 20 mW 400-1000 nm - SM PM MM - COAXIAL
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.04 nA
Capacitance:
1.2 to 1.6 pF
Responsivity/Photosensitivity:
0.35 A/W
Package Type:
Coaxial Pigtail
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Description: 900 to 1700 nm KP-H InGaAs Photodiode with Chip package
Description: 5 mm² active area UV-detector Silicon carbide photodiode
Description: Mounted InGaAs Photodiode, 900-1700 nm, Cathode Grounded
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.05 A/W
Package Type:
Connectorized
more info
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Description: InGaAs PIN Photodiode
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