Photodiodes - Page 22
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
Ceramic, Chip
more info
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Description: 700 nm Silicon Large Area Avalanche Photodiode (LAAPD)
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
700 nm (120 to 1000 nm)
Operation Mode:
Photovoltaic
Capacitance:
130 pF (Terminal)
Responsivity/Photosensitivity:
10 to 27 A/W
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
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Description: Large Area InGaAs PIN Photodiodes diameter of active area=3 mm
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
750 to 1800 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Through-Hole
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
more info
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Description: 700 to 1100 nm PIN Photodiodes with DIP / DIL / Thru-Hole Package
Description: InGaAs, InAIAs, Avalanche Photodiode from 1260 to 1620 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs, InAIAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photoconductive
Dark Current:
15 to 30 nA
Capacitance:
120 to 140 fF
Responsivity/Photosensitivity:
8 to 10 A/W
more info
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Description: 2 to 12 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: Si Photodiode, 65 ns Rise Time, 350 - 1100 nm, 10 mm x 10 mm Active Area
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.03 to 57 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 57 nA
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
more info
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Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 1500um
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can
more info
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Description: This PIN-photodiode consists of a large chip with 0.44x0.44mm active area mounted in a PPA Resin package and covered with epoxy resin
Description: InGaAs APD QUADRANT PHOTODIODE
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 100 nA
Responsivity/Photosensitivity:
9 to 9.5 A/W
more info
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Description: InGaAs Avalanche Photodiode from 1100 to 1700 nm
316 - 330 of 2551 Photodiodes
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