Photodiodes - Page 16
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
15 to 30 nA
Capacitance:
500 to 1400 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
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Description: High Speed InGaAs PIN Photodiodes diameter of active area=50 µm
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 to 0.75 pF
Responsivity/Photosensitivity:
0.8 to 0.90 A/W
Package Type:
Through-Hole
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Description: 350 to 1100 nm PIN Photodiodes with 3.9 mm Active Area
Description: 350 to 1100 nm PIN Photodiodes with 0.81 mm Active Area
Description: InGaAs, InAIAs, Avalanche Photodiode from 1260 to 1620 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs, InAIAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photoconductive
Dark Current:
15 to 30 nA
Capacitance:
120 to 140 fF
Responsivity/Photosensitivity:
8 to 10 A/W
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Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 0.01 to 26 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 26 nA
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
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Description: 400 ns Rise Time, 320 - 1100 nm, 1.1 mm x 1.1 mm Active Area Si Photodiode
Description: Receptacle InGaAs PIN photodiodes, 1000um active area, FC connector
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Module with Connector
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Thermoelectrically Cooled Extended InGaAs Photodiodes
Description: This PIN-photodiode consists of a large chip with 0.8x0.8mm active area mounted on a lead frame with a ?5 epoxy lens with visible light cut off filter
Description: Silicon avalanched photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.40 nA
Responsivity/Photosensitivity:
0.50 to 0.55 A/W
Package Type:
Surface Mount
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Description: Silicon photodiode from 400 to 1150 nm
Description: 200 nm - 1100 nm, Photodiode for Electron Detection Applications
Wavelength Range:
Below 150 nm
Operation Mode:
Photoconductive
Capacitance:
1 nF( 0 V), 85 pF(150 V)
Responsivity/Photosensitivity:
0.05 to 0.25 A/W
Package Type:
Through-Hole
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226 - 240 of 2551 Photodiodes
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