Photodiodes - Page 14
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 970 nm Surface Mount Photodiodes with 20 ns Rise Time
Description: 970 nm SM series photodiode with PCB, Surface Mount Package
Description: 60 x 60 mils Active area PIN Silicon photodiode with Chip package
Description: Infrared detector PbS photoconductive detector Bondable bare chip
Photodiode Material:
Silicon
Wavelength Range:
Peak wavelength: 980 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
Connectorized
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Description: InGaAs PIN Photodiode 2 GHz 50 mW 800-1700 nm - SM PM MM - COAXIAL
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.16 nA
Capacitance:
0.65 to 1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
Coaxial Pigtail
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Description: 850 nm Silicon Photodiode for Pulse Detector Applications
Description: 0.05 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
30 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 500 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
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Description: 950 nm - 1650 nm, InGaAs Avalanche Photodiode for LiDAR Applications
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
950 to 1650 nm
Operation Mode:
Photovoltaic
Package Type:
Surface Mount
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Description: Large Area Mounted Silicon Photodiode, 350-1100 nm, Cathode Grounded
Description: Silicon Planar PIN Photodiode
Description: InGaAs PIN Photodiode
Description: InGaAs Detector, 70µm Dia, TO-46
Description: 1000 nm, PIN photodiode
Description: Silicon PIN photodiode from 400 to 1100 nm
Description: InGaAs PIN photodiode from 1100 to 1650 nm
Description: 0.2 mm Area, High Sensitivity Avalanche Photodiode in TO-Can Package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Capacitance:
1 pF (Terminal)
Responsivity/Photosensitivity:
0.44 A/W
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196 - 210 of 2551 Photodiodes
Photodiode companies
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