Photodiodes - Page 17
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 350 to 1100 nm PIN Photodiodes with DIP / DIL / Thru-Hole Package
Description: TO-Can photodiode from 1.65 to 2.35 µm
Description: InGaAs PIN photodiode from 850 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.08 nA
Capacitance:
0.35 to 0.8 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
more info
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Description: 13 mm2 Active Area PIN photodiode with TO-Can package
Description: Si Photodiode, 1 ns Rise Time, 200 - 1100 nm, Ø1 mm Active Area
Description: Top Illuminated Self-hermetic Monitor Photodiode (MPD) Chip
Description: 500um InGaAs APD Photodiodes In TO46 Package
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
60 to 100 nA
Responsivity/Photosensitivity:
9 A/W
more info
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Description: 1010 nm PD series photodiode with Chip, PCB, TO-46 Package
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: 102 x 102 mils Active area PIN Silicon photodiode with Chip package
Description: Infrared detector PbS photoconductive detector Double encapsulated TO-package
Description: InGaAs PIN Photodiode 2 GHz 10 mW 800-1700 nm - SM PM MM - COAXIAL
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.16 nA
Capacitance:
0.65 to 1.1 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
Coaxial Pigtail
more info
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Description: 900 to 1700 nm InGaAs Photodiodes with Ceramic, DIP / DIL / Thru-Hole, TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
4 to 6 pF (Terminal)
Responsivity/Photosensitivity:
0.9 A/W
Package Type:
Ceramic, DIP / DIL / Thru-Hole, TO-Can
more info
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Description: 0.05 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
30 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
more info
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Description: 30 µm Aura Noiseless InGaAs Avalanche Photodiode with TO-CAN Package
Description: Large Area Mounted Silicon Photodiode, 350-1100 nm, Anode Grounded
Description: High speed and high sensitive. PIN photodiode in miniature flat top view lens SMD package and it is molded in a black plastic.
Description: 28-Gb/s PIN Photodiodes Substrate-Illuminated Detectors
241 - 255 of 2551 Photodiodes
Photodiode companies
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