Photodiodes - Page 8
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 350 to 1100 nm PIN Photodiodes with 50 ns Rise Time
Description: Single-Photon Avalanche Diode Sensor for Quantum Sensing Applications
Description: Mounted Silicon Photodiode, 200-1100 nm, Anode Grounded
Description: 6.0mm*4.8mm Chip Photodiode
Description: 850 nm GaAs PIN Photodiode for Fiber Optic Communication Applications
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
50 to 100 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Channels:
Single, Quad, Multiple
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Description: 32-Gb/s InGaAs PIN Photodiode
Description: Surface Mount photodiode for 850 nm
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs, PIN Photodiode from 0.6 to 1.7 µm
Description: InGaAs PIN photodiode from 850 to 1700 nm
Description: 3 mm Area, High Sensitivity Avalanche Photodiode in TO-Can Package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 nA
Capacitance:
35 pF (Terminal)
Responsivity/Photosensitivity:
0.44 A/W
more info
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Description: 1000 to 1630 nm Avalanche Photodiodes with 8 to 25 nA Dark Current
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
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Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Description: Silicon Photodiode
Photodiode Material:
Silicon
Wavelength Range:
420 to 675 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA (Reverse)
Capacitance:
1.2 to 400 pF
Package Type:
TO-Can, Leaded
more info
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Description: Surface Mount PIN photodiode from 450 to 1050 nm
Description: Mounted InGaAs Photodiode, 900-1700 nm, Cathode Grounded
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.05 A/W
Package Type:
Connectorized
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Description: InGaAs PIN Coaxial photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1310 nm, 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
0.5 to 0.75 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
more info
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Description: 850 nm Silicon PIN Photodiode for Rain Sensors & LiDAR Applications
Description: InGaAs, PIN Photodiode from 1000 to 1650 nm
Description: 1000 to 1630 nm Avalanche Photodiodes with 30 to 250 nA Dark Current
106 - 120 of 2551 Photodiodes
Photodiode companies
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