Photodiodes - Page 30

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Multi Channel X-Ray Detectors and Photoconductive Arrays
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
5 to 50 nA
Capacitance:
70 to 275 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon, GaAs, GaAlAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 60 nA
Capacitance:
4 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 400 to 1700 nm InGaAs Positive Sensitive Photodiode with Ceramic Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
3 to 300 nA
Capacitance:
250 to 450 pF
Responsivity/Photosensitivity:
0.26 to 1.06 A/W
Package Type:
Ceramic
Module:
No
more info
Description: InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
1.003 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 µA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: High Speed InGaAs PIN Photodiodes diameter of active area=50 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 3 nA
Capacitance:
1.5 to 2 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 350 to 1100 nm PIN Photodiodes with 75 ns Rise Time
Photodetector Type:
PIN
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
10 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
0.43 A/W
Package Type:
DIP / DIL / Thru-Hole
more info
Description: 2.4 to 5.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
4.2 to 5 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1 to 2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 265 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
265 µA
Capacitance:
2090 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 1000um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs Avalanche photodiode from 700 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
700 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Thermoelectrically Cooled InGaAs Photodiodes
Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2.5 nA
Capacitance:
1000 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: This PIN-photodiode consists of a large chip with 1.6x1.6mm active area mounted on the TO-18 stem and is hermetical sealed by metal can with ball lens
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
18 pF
Package Type:
Chip, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
GaP
Operation Mode:
Photovoltaic
Dark Current:
5 to 30 pA
Capacitance:
180 pF
Responsivity/Photosensitivity:
0.08 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: UV-B Sensor
Photodetector Type:
Schottky
Photodiode Material:
AlGaN
Wavelength Range:
220 to 320 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Responsivity/Photosensitivity:
0.14 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 15 nA
Capacitance:
48 to 80 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
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