Photodiodes - Page 44
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: Silicon PIN photodiode from 450 to 1050 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Responsivity/Photosensitivity:
0.57 A/W
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Capacitance:
1.8 to 2.2 pF
Responsivity/Photosensitivity:
0.85 to 1.05 A/W
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Description: 200 to 380 nm SiC UV Photodiode with TO-46 Package
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
200 to 380 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 1 nA
Responsivity/Photosensitivity:
0.13 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
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Description: 970 nm Surface Mount Photodiodes with 12 to 65 pF Capacitance
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 150 nA to 350 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
150 nA to 350 µA
Capacitance:
100 to 1500 pF
Responsivity/Photosensitivity:
1.24 A/W
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Description: InGaAs PIN Photodiode Chip, Active Area 500um
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1000 nm
Description: Thermoelectrically Cooled Extended InGaAs Photodiodes
Description: This PIN-photodiode consists of a large chip with 1.3x1.3mm active area mounted on the TO-18 stem and is hermetical sealed by metal can with ball lens
Photodiode Material:
GaP, AlGaAs, GaAs
Operation Mode:
Photoconductive
Dark Current:
1 to 2.5 nA
Responsivity/Photosensitivity:
0.3 to 0.55 A/W
Package Type:
Through-Hole
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646 - 660 of 2551 Photodiodes
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