Photodiodes - Page 46

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Blue Enhanced Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
8800 pF
Responsivity/Photosensitivity:
0.15 to 0.20 A/W
Package Type:
Module with Connector
Configuration:
Array
Channels:
Single
Module:
Yes
more info
Description: Silicon PIN photodiode from 700 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 300 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
300 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 25 nA
Capacitance:
65 pF
Responsivity/Photosensitivity:
0.2 to 0.66 A/W
Package Type:
DIL, Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
1.7 µm
Operation Mode:
Photovoltaic
Dark Current:
22.5 µA
Capacitance:
6750 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon, GaAs, GaAlAs
Wavelength Range:
850 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 60 nA
Capacitance:
4 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 210 to 280 nm GaN UV Photodiode with 0.05 A/W Responsitvity
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
210 to 280 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.05 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
60 to 150 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: 350 to 1100 nm PIN Photodiodes with 0.81 mm Active Area
Photodetector Type:
PIN
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
2 to 30 nA
Capacitance:
2 to 10 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Surface Mount, Ceramic
more info
Description: 1 to 12 µm HgCdTe ambient temperature, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.008 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 750 to 1750 nm InGaAs PIN Photodiodes with 0.1 nA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
750 to 1750 nm
Operation Mode:
Photovoltaic
Dark Current:
0.1 nA
Capacitance:
12.5 pF
Responsivity/Photosensitivity:
0.37 A/W
Package Type:
DIP / DIL / Thru-Hole
Module:
No
more info
Description: Receptacle InGaAs PIN photodiodes, 3.0GHz cut-off frequency, LC connector
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Module with Connector
Configuration:
Single
Module:
Yes
more info
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Thermoelectrically Cooled Extended InGaAs Photodiodes
Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
1200 to 2550 nm
Operation Mode:
Photovoltaic
Dark Current:
0.8 to 4 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.9 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: This PIN-photodiode consists of a large chip with 0.8x0.8mm active area mounted on a lead frame with a ?5 clear epoxy lens.
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
6 pF
Package Type:
Leaded
Configuration:
Single
Channels:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 40 nA
Capacitance:
300 to 1200 pF
Responsivity/Photosensitivity:
0.02 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
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