Photodiodes - Page 47
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 400 nm - 1100 nm, Nd:YAG Optimized Silicon Photodiode for Pointing Applications
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 100 nA
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
more info
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Description: Schottky-type Photodiode from 220 to 280 nm
Description: One Direction Position Sensing Detector
Description: Silicon Avalanche Photodiode 905 nm
Description: EUV & UV Detectors (SXUV & UVG Family)
Description: TO-Can photodiode from 2.4 to 3.1 µm
Description: Si photodetector (TO package)
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
more info
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Description: 97.2 x 97.2 mils Active area PIN Silicon photodiode with Chip package
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
222 to 392 nm
Operation Mode:
Photoconductive
Capacitance:
10 pF (Junction)
Responsivity/Photosensitivity:
95 to 190 mA/W
more info
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Description: InGaAs Photodiode, 17 ns Rise Time, 800-2600 nm, Ø0.5 mm Active Area
Description: 1.8mm Round Subminiature Silicin PIN Photodiode
Description: Normal Response, 100.0mm2, Silicon Detector
Description: 390 nm to 800 nm, Silicon PIN Photodiode for Ambient Light Sensor Applications
Description: 620 nm Silicon Avalanche Photodiode for Analytical Instrument Applications
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 nA
Responsivity/Photosensitivity:
0.42 A/W
more info
Similar products from this company
Description: Silicon PIN Photodiode from 430 to 1100 nm
691 - 705 of 2551 Photodiodes
Photodiode companies
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