Photodiodes - Page 52

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Blue Enhanced Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
17000 pF
Responsivity/Photosensitivity:
0.15 to 0.20 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: 440 to 1100 nm Near-Infrared TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 870 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
870 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
48 pF
Responsivity/Photosensitivity:
0.35 to 0.6 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 880 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
880 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 300 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
300 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 25 nA
Capacitance:
65 pF
Responsivity/Photosensitivity:
0.2 to 0.45 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 20 nA
Capacitance:
100 to 200 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Chip, Die
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
30 to 25 nA
Capacitance:
3.2 to 4 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon, GaAs, GaAlAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 60 nA
Capacitance:
4 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 900 to 1700 nm Diameter InGaAs Photodiode with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 4 nA
Capacitance:
75 to 100 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.95 µm - 1.65 µm, InGaAs Avalanche Photodiode for LiDAR Applications
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: 400 nm to 1100 nm / 950 nm - 1100 nm, Dual Sandwich Photodiode for Sensing Applications
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm (Silicon)/950 to 1100 nm (Silicon)
Operation Mode:
Photoconductive
Capacitance:
70 pF
Responsivity/Photosensitivity:
0.45 A/W (Silicon)/0.12 A/W (Silicon)
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 2.5 to 6.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 750 to 1750 nm InGaAs PIN Photodiodes with 0.25 nA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
750 to 1750 nm
Operation Mode:
Photovoltaic
Dark Current:
0.25 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.37 A/W
Package Type:
DIP / DIL / Thru-Hole
Module:
No
more info
Description: InGaAs PIN Photodiode Chip, Active Area 1000um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
Package Type:
Chip
Module:
Yes
more info
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Thermoelectrically Cooled Extended InGaAs Photodiodes
Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
1200 to 2570 nm
Operation Mode:
Photovoltaic
Dark Current:
1.5 to 7.5 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.9 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
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