Photodiodes - Page 54

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
2100 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
17 to 48 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 900 nm Silicon PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 740 to 1120 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
740 to 1120 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
72 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: 850 nm GaAs PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.1 to 0.12 pF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
Chip, Die
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
0.2 µA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.26 to 0.87 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
70 to 170 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: Silicon-InGaAs Dual Sandwich Photodiode for Metal Processing Applications
Photodetector Type:
PIN
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe ambient temperature photoelectromagnetic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.002 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 64 nA to 140 µA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
64 nA to 140 µA
Capacitance:
75 to 800 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Receptacle InGaAs PIN photodiodes, 2.5GHz cut-off frequency, SC/APC connector
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Module with Connector
Configuration:
Single
Module:
Yes
more info
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Thermoelectrically Cooled InGaAs Photodiodes
Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 1.5 nA
Capacitance:
550 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA (Reverse)
Capacitance:
6 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 330 to 720 nm
Photodiode Material:
Silicon
Wavelength Range:
330 to 720 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
0.31 nF
Responsivity/Photosensitivity:
0.29 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: EUV & UV Detectors (SXUV & UVG Family)
Wavelength Range:
1 to 400 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 100 nA
Capacitance:
0.5 nF
Responsivity/Photosensitivity:
0.02 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
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