Photodiodes - Page 123

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
150 to 300 nA
Capacitance:
15 to 25 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Ceramic, DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 2.25 mm Active Area Quadrant Silicon Photodiode with TO-5 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 3.5 nA
Capacitance:
9 to 45 pF
Responsivity/Photosensitivity:
0.32 to 0.55 A/W
Package Type:
TO-Can
Channels:
Quad
Module:
No
more info
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 0.8 nA
Capacitance:
0.8 pF
Responsivity/Photosensitivity:
0.45 to 0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 1 to 12 µm HgCdTe ambient temperature photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
5 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.07 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
Silicon
Wavelength Range:
925 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
100 to 130 pF
Package Type:
Through-Hole, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG22-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Capacitance:
650 pF
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
40 to 800 pA
Capacitance:
8.2 to 33 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
8.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.40 to 0.56 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
more info
Description: 4.79 mm Active Area Quadrant Silicon Photodiode with TO-8 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 27 nA
Capacitance:
75 to 375 pF
Responsivity/Photosensitivity:
0.32 to 0.55 A/W
Package Type:
TO-Can
Channels:
Quad
Module:
No
more info
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
150 to 1000 nA
Capacitance:
125 to 150 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: 2.5 to 6.5 µm HgCdTe ambient temperature photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
3 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
Silicon
Wavelength Range:
525 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 pA
Responsivity/Photosensitivity:
0.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: PbSe Detectors PB45-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 4.7 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 180 pA
Capacitance:
0.40 to 9.46 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
more info
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