Photodiodes - Page 127
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Multi Element Photodiode Array
Description: InGaAs PIN Photodiode from 800 to 1700 nm
Description: Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 1 nA
Responsivity/Photosensitivity:
10 to 15 mA/W
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Description: Silicon PIN photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
40 to 200 pF
Responsivity/Photosensitivity:
0.1 to 0.67 mA/mW
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Description: 6.7 mm Active Area PIN Silicon Photodiode with Leaded Package
Description: Photoconductive Devices
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
30 to 70 nA
Capacitance:
130 to 1000 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: 2.5 to 6.5 µm HgCdTe ambient temperature photovoltaic detector
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.4 nA
Responsivity/Photosensitivity:
35 to 50 A/W
Package Type:
Surface Mount
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Description: DUV / UV Enhanced Silicon Avalanche Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
260 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
21 to 44 A/W
Package Type:
TO-Can, TO-Can
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Description: Silicon PIN Photodiode
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 1000 pA
Capacitance:
55 to 271 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
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Description: Silicon Avalanche Photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 200 nA
Responsivity/Photosensitivity:
2.8 to 45 A/W
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Description: Silicon PIN photodiode from 760 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
760 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Responsivity/Photosensitivity:
0.51 to 0.56 A/W
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Description: InGaAs Avalanche photodiode from 1260 to 1620 nm
Description: 17.9 mm Active Area Blue Enhanced PIN Silicon Photodiode with Ceramic Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
400 to 800 nA
Responsivity/Photosensitivity:
0.15 to 0.17 A/W
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Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
2000 to 175 nA
Capacitance:
600 to 14 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled photovoltaic detector
1891 - 1905 of 2551 Photodiodes
Photodiode companies
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