Photodiodes - Page 132
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Description: Silicon Avalanche Photodiode 635 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
35 A/W
Package Type:
Surface Mount
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Description: InGaAs PIN photodiode from 0.9 to 2.6 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.6 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 100 µA
Capacitance:
1800 to 3000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
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Description: 8.02 mm Active Area PIN Silicon Photodiode with Leaded Package
Description: Photoconductive Devices
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic detector
Description: Regular InGaAs Photodiode IG17-Series
Description: Silicon photodiode from 460 to 675 nm
Description: InGaAs PIN photodiode from 0.9 to 1.67 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.67 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.8 nA
Capacitance:
450 to 1500 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
more info
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Description: 0.37 mm Active Area UV Enhanced Silicon Photodiode with Surface Mount Package
Description: Inversion Layer Photodiodes
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic detector
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.4 nA
Responsivity/Photosensitivity:
35 to 50 A/W
Package Type:
Surface Mount
more info
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Description: Extended InGaAs Photodiodes IG26-Series
Description: Silicon Avalanche Photodiode 800 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
50 A/W
Package Type:
Through-Hole
more info
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1966 - 1980 of 2551 Photodiodes
Photodiode companies
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