Photodiodes - Page 136
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
35 to 50 A/W
Package Type:
Surface Mount
more info
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Description: Regular InGaAs Photodiode IG17-Series
Description: InGaAs PIN Photodiode from 800 to 1700 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photovoltaic
Dark Current:
25 to 125 nA
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
more info
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Description: 1.55 mm Active Area Silicon Photodiode with Leaded Package
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Through-Hole, DIP, DIL
more info
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Description: 2 to 13 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detector
Description: Extended InGaAs Photodiodes IG26-Series
Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Surface Mount
more info
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photovoltaic
Dark Current:
0.2 to 2 µA
Responsivity/Photosensitivity:
0.8 to 1 A/W
more info
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Description: 5.1 mm Diameter Blue Enhanced Silicon PIN Photodiode with TO-8 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
6.5 to 26 nA
Capacitance:
75 to 415 pF
Responsivity/Photosensitivity:
0.2 to 0.28 A/W
more info
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Description: Large Active Area InGaAs Photodiodes
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
2026 - 2040 of 2551 Photodiodes
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