Photodiodes - Page 138

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 10 nA
Capacitance:
8 to 50 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: Regular InGaAs Photodiode IG17-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 1.65 µm
Operation Mode:
Photovoltaic
Dark Current:
1 to 8 nA
Capacitance:
215 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon PIN Photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 nA
Capacitance:
2 to 10 pF
Responsivity/Photosensitivity:
0.44 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 pA
Capacitance:
30 to 50 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
PCB
Configuration:
Array
Module:
No
more info
Description: 0.18 mm Active Area Silicon Photodiode with Surface Mount Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 nA
Capacitance:
6 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
600 nA
Capacitance:
375 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs, InP
Wavelength Range:
1300 nm
Operation Mode:
Photoconductive
Dark Current:
2 uA
Capacitance:
60 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG22-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Capacitance:
1750 pF
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon PIN Photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
83 to 1500 nA
Capacitance:
45 to 90 pF
Responsivity/Photosensitivity:
0.1 to 0.20 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Chip Silicon PIN photodiode with dark current of 8 to 30 nA
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
780 nm
Operation Mode:
Photoconductive
Dark Current:
8 to 30 nA
Capacitance:
25 to 40 pF
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: 1.6 mm Active Area Quadrant Silicon Photodiode with TO-5 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2.5 nA
Capacitance:
2 to 20 pF
Responsivity/Photosensitivity:
0.32 to 0.55 A/W
Package Type:
TO-Can
Channels:
Quad
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
14 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
8 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.8 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs, InP
Wavelength Range:
1300 nm
Operation Mode:
Photoconductive
Dark Current:
2 uA
Capacitance:
200 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: PbSe Detectors Cooled Ultimate PB55-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 5.2 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
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