Photodiodes - Page 140
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Large Active Area InGaAs Photodiodes
Description: Silicon PIN photodiode from 320 to 1060 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Responsivity/Photosensitivity:
0.47 to 0.6 A/W
more info
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Description: 15 mm Active Area Red Enhanced High Performance Silicon Photodiode with TO-5 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
76 to 255 pF
Responsivity/Photosensitivity:
0.56 to 0.64 A/W
more info
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Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Description: 1 to 15 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detector
Description: Silicon photodiode from 400 to 1150 nm
Description: InGaAs PIN photodiode from 0.9 to 1.9 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.9 µm
Operation Mode:
Photovoltaic
Dark Current:
50 to 500 nA
Capacitance:
1000 to 2000 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
more info
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Description: 8 mm Active Area Silicon Photodiode with Leaded Package
Description: Soft X-Ray, Far UV Enhanced Photodiodes
Description: 1 to 12 µm HgCdTe ambient temperature photoconductive detector
Description: PbSe Detectors Cooled Standard PB50-Series
Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Through-Hole
more info
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 1.5 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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Description: 42.6 mm Active Area Silicon PIN Photodiode with TO-8 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
13 to 52 nA
Capacitance:
150 to 725 pF
Responsivity/Photosensitivity:
0.32 to 0.55 A/W
more info
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Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
2086 - 2100 of 2551 Photodiodes
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