Photodiodes - Page 142

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
15 to 1000 nA
Capacitance:
1800 to 9500 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Module with Connector
Configuration:
Array
Channels:
Single
Module:
Yes
more info
Description: 2.9 mm Active Area Red Enhanced Silicon PIN Photodiode with TO-46 Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
8 to 30 nA
Capacitance:
2.5 to 17.5 pF
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Series E Eye Response Detectors
Photodiode Material:
Silicon
Wavelength Range:
550 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
7 to 35 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
8 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Regular InGaAs Photodiode IG17-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 1.65 µm
Operation Mode:
Photovoltaic
Capacitance:
215 pF
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InP Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InP
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
45 to 150 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 271 to 279 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
271 to 279 nm
Operation Mode:
Photoconductive
Dark Current:
25 pA
Capacitance:
500 pF
Responsivity/Photosensitivity:
6 to 10 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 42.9 mm Active Area Photoconductive Silicon PIN Photodiode with TO-8 Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 15 nA
Capacitance:
140 to 150 pF
Responsivity/Photosensitivity:
0.56 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
2000 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.2 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Regular InGaAs Photodiode IG17-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 1.65 µm
Operation Mode:
Photovoltaic
Capacitance:
305 pF
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN Photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 20 nA
Capacitance:
2 to 15 pF
Responsivity/Photosensitivity:
0.10 to 1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 500 pA
Capacitance:
1300 pF
Responsivity/Photosensitivity:
0.1 to 0.5 A/W
Package Type:
Ceramic
Module:
No
more info
Description: 42.6 mm Active Area Red Enhanced Silicon PIN Photodiode with TO-8 Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
110 to 425 nA
Capacitance:
22 to 235 pF
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
Package Type:
TO-Can
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
2116 - 2130 of 2551 Photodiodes
Photodiode companies

Filters

X

Manufacturers from 

Photodetector Type 

Companies 

Photodiode Material 

Package Type 

Operation Mode 

Wavelength Range (nm)  

Capacitance (pF)  

Responsivity/Photosensitivity (A/W)  

Dark Current (nA)  

Channels 

Configuration 

Tags