Photodiodes - Page 139

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 5 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 330 to 720 nm
Photodiode Material:
Silicon
Wavelength Range:
330 to 720 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
0.31 nF
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 pA
Capacitance:
30 to 50 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
PCB
Configuration:
Array
Module:
No
more info
Description: 4 mm Active Area PIN Silicon Photodiode with Leaded Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
18 to 25 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
Leaded
Module:
No
more info
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
800 nA
Capacitance:
450 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Description: 2 to 13 µm HgCdTe ambient temperature photovoltaic multiple junction detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.002 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
Silicon
Wavelength Range:
925 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
80 to 100 pF
Package Type:
Through-Hole, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Regular InGaAs Photodiode IG17-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 1.65 µm
Operation Mode:
Photovoltaic
Dark Current:
0.3 to 2 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 200 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
200 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 nA
Capacitance:
8 nF
Responsivity/Photosensitivity:
0.04 to 0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.4 nA
Capacitance:
1 to 1.5 pF
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: 5.08 mm Diameter Super Blue Enchanced Silicon Photodiode with TO-8 Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
7 to 26 nA
Capacitance:
25 to 200 pF
Responsivity/Photosensitivity:
0.22 to 0.28 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Fully Depleted Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 5 nA
Capacitance:
8.0 to 9 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
TO-Can
Channels:
Single
Module:
No
more info
Description: 10.7 µm TO-Can InAs, InAsSb photodiode
Photodiode Material:
InAs, InAsSb
Wavelength Range:
10.7 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.35 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG22-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Capacitance:
5200 pF
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon PIN Photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.2 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.47 A/W
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
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