Photodiodes - Page 135

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Blue Enhanced Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.15 to 0.20 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: High Speed InGaAs Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic, submount
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Description: 1 to 14 µm HgCdTe two-stage thermoelectrically cooled photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
12 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.005 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG26-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.45 µm
Operation Mode:
Photovoltaic
Dark Current:
4 to 25 nA
Capacitance:
140 pF
Responsivity/Photosensitivity:
0.7 to 1.36 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN Photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 20 nA
Capacitance:
2 to 15 pF
Responsivity/Photosensitivity:
0.10 to 1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.07 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.07 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 100 nA
Capacitance:
200 to 500 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 8 mm Active Area Super-Blue Enhanced Photovoltaic Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
0.3 to 0.5 nA
Capacitance:
600 pF
Responsivity/Photosensitivity:
0.16 A/W
Package Type:
Ceramic
Module:
No
more info
Description: 155Mbps/622Mbps/1.25Gbps/2.5Gbps High Speed InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.40 to 5 nA
Capacitance:
14 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2 to 13 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.18 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
Silicon
Wavelength Range:
525 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 pA
Capacitance:
100 pF
Responsivity/Photosensitivity:
0.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG22-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
0.5 to 5 nA
Capacitance:
1100 pF
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: InGaAs Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 50 nA
Capacitance:
1.25 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.33 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 7.5 mm Active Area Silicon Photodiode with Surface Mount Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 40 pF
Responsivity/Photosensitivity:
0.3 to 0.68 A/W
Package Type:
Ceramic, Surface Mount
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
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