Photodiodes - Page 134

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photops Photodiode-Amplifier Hybrids
Photodiode Material:
Silicon
Wavelength Range:
200 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
4500 pF
Responsivity/Photosensitivity:
0.10 to 0.14 A/W
Package Type:
DIP
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2.54 mm Diameter UV Enhanced Silicon Photodiode with TO-5 Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 6.5 nA
Capacitance:
9 to 87 pF
Responsivity/Photosensitivity:
0.14 to 0.17 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.13 to 2 nA
Capacitance:
7 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Dual
Module:
No
more info
Description: Type II superlattice, two-stage thermoelectrically cooled, photoconductive detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
6 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
1.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
6 to 12 pF
Responsivity/Photosensitivity:
0.45 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG26-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.45 µm
Operation Mode:
Photovoltaic
Dark Current:
2 to 8 nA
Capacitance:
35 pF
Responsivity/Photosensitivity:
0.7 to 1.36 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon Avalanche Photodiode 635 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
635 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
35 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
5 pA
Capacitance:
170 pF
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: 11.3 Diameter Silicon NIR Photodiode with BNC Connector
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
7 to 500 nA
Capacitance:
144 to 214 pF
Responsivity/Photosensitivity:
0.67 to 0.71 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: Photoconductive Devices
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
3 to 12 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 1 to 12 µm HgCdTe ambient temperature photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.001 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
35 to 50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: PbSe Detectors Cooled Standard PB50-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 4.9 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 800 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
50 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.4 nA
Capacitance:
1 to 1.5 pF
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
Package Type:
TO-Can Pigtail, Coaxial
Configuration:
Single
Module:
No
more info
Description: 93.1 mm Active Area Blue Enchanced Silicon Photodiode with Ceramic Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 nA
Capacitance:
250 pF
Responsivity/Photosensitivity:
0.25 A/W
Package Type:
Ceramic
Module:
No
more info
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