Photodiodes - Page 129

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
2000 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: 2.5 mm Diameter Blue Enhanced Silicon PIN Photodiode with TO-5 Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.6 to 6.4 nA
Capacitance:
87 to 300 pF
Responsivity/Photosensitivity:
0.2 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
320 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: 1 to 15 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
12 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.05 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
35 to 50 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Pbs Detectors cooled Ultimate PB30-Series
Photodiode Material:
PbS
Wavelength Range:
1 to 3.3 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1.3 to 1.55 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1.3 to 1.55 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 100 nA
Capacitance:
5 to 9 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 2.4 to 5.3 µm InAs and InAsSb two-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
2.9 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Regular InGaAs Photodiode IG17-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 1.65 µm
Operation Mode:
Photovoltaic
Capacitance:
1550 pF
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InP Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InP
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
45 to 150 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.07 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.07 µm
Operation Mode:
Photovoltaic
Dark Current:
100 to 1000 nA
Capacitance:
1800 to 3000 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 0.25 mm Active Area Quadrant Silicon Photodiode with TO-18 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.4 nA
Capacitance:
1.5 to 3 pF
Responsivity/Photosensitivity:
0.5 to 57 A/W
Package Type:
TO-Can
Channels:
Quad
Module:
No
more info
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
2 to 8 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Type II superlattice, two-stage thermoelectrically cooled, photoconductive detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
4 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.04 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
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