Photodiodes - Page 148

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Soft X-Ray, Far UV Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
6 to 8 nF
Package Type:
Module with Connector
Channels:
Single
Module:
Yes
more info
Description: Pbs Detectors Uncooled PB25-Series
Photodiode Material:
PbS
Wavelength Range:
1 to 3 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 pA
Capacitance:
65 pF
Responsivity/Photosensitivity:
0.33 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Photovoltaic Devices
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photovoltaic
Capacitance:
70 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
Through-Hole
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.65 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.06 nA
Capacitance:
75 to 140 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 4x4 Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photovoltaic
Capacitance:
75 pF
Responsivity/Photosensitivity:
0.35 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 25 nA
Capacitance:
550 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Inversion Layer Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photoconductive
Capacitance:
4500 pF
Responsivity/Photosensitivity:
0.09 to 0.14 A/W
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description: Surface Mount Silicon photodiode from 380 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 5 pA
Capacitance:
0.7 to 1 pF
Responsivity/Photosensitivity:
640 mA/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Cavity Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
14 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.5 nA
Capacitance:
5 to 7.5 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Ceramic, Surface Mount
Module:
No
more info
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.35 to 6 nA
Capacitance:
40 to 225 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 pA
Capacitance:
65 pF
Responsivity/Photosensitivity:
0.4 to 0.62 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Fully Depleted Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
830 nm
Operation Mode:
Photovoltaic
Capacitance:
1300 pF
Responsivity/Photosensitivity:
0.54 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.45 to 0.72 A/W
Package Type:
Surface Mount, Ceramic, Chip
Configuration:
Single
Module:
No
more info
Description: Series E Eye Response Detectors
Photodiode Material:
Silicon
Wavelength Range:
550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Capacitance:
35 to 130 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
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