Photodiodes - Page 153
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Cavity Ceramic Packages
Description: InGaAs PIN photodiode from 0.9 to 2.05 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.05 µm
Operation Mode:
Photovoltaic
Dark Current:
25 to 250 nA
Capacitance:
850 to 2000 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
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Description: High Speed InGaAs Arrays
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Responsivity/Photosensitivity:
0.45 to 0.6 A/W
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Description: Photovoltaic Devices
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 0.1 µA
Capacitance:
500 to 1000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
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Description: Photops Photodiode-Amplifier Hybrids
Description: InGaAs PIN photodiode from 0.9 to 2.05 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.05 µm
Operation Mode:
Photovoltaic
Capacitance:
195 to 500 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
more info
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Description: Fully Depleted Photodiodes
Description: Chip Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 150 pA
Capacitance:
330 to 430 pF
Responsivity/Photosensitivity:
0.32 to 0.57 A/W
more info
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Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: Photoconductive Devices
Description: Silicon PIN photodiode from 340 to 1100 nm
Description: High Speed InGaAs Arrays
Description: Chip Silicon PIN photodiode with dark current of 5 to 50 nA
2281 - 2295 of 2551 Photodiodes
Photodiode companies
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