Photodiodes - Page 157

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
17000 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
250 to 1250 pA
Capacitance:
35 to 60 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic, DIP
Configuration:
Array
Channels:
Multiple (46 Channels)
Module:
No
more info
Description: Fully Depleted Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
950 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 10 nA
Capacitance:
40 to 45 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
Ceramic
Channels:
Single)
Module:
No
more info
Description: TO-Can Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photovoltaic
Capacitance:
5 pF
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 20 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.6 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.6 µm
Operation Mode:
Photovoltaic
Dark Current:
30 to 300 µA
Capacitance:
4000 to 5000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
4300 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
60 to 80 pF
Responsivity/Photosensitivity:
0.25 to 0.28 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 100 nA
Capacitance:
5 to 9 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Ceramic, DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 pA
Capacitance:
500 pF
Responsivity/Photosensitivity:
0.34 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Ceramic Packages w/Leads
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 20 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
100 to 800 pA
Capacitance:
5 to 8 pF
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
Package Type:
Surface Mount, Chip
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Cavity Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.05 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.05 µm
Operation Mode:
Photovoltaic
Dark Current:
0.5 to 5 nA
Capacitance:
20 to 50 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
4300 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
5 pA
Capacitance:
170 pF
Responsivity/Photosensitivity:
0.39 to 0.43 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
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