Photodiodes - Page 159
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Cavity Ceramic Packages
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
500 to 2500 pA
Capacitance:
60 to 100 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic, DIP
Channels:
Multiple (16 Channels)
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Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: Silicon PIN photodiode from 320 to 1100 nm
Description: High Speed Silicon Photodiodes with 1.25Gbps Photodiodes
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
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Description: 10Gbps InGaAs Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Capacitance:
0.16 to 0.20 pF
Responsivity/Photosensitivity:
0.75 to 0.85 A/W
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Description: InGaAs PIN photodiode from 0.9 to 1.65 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.07 to 0.35 nA
Capacitance:
450 to 1500 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Description: Detector-Filter Combination Series Planar Diffused Silicon Photodiodes
Description: DIP Silicon photodiode from 320 to 1100 nm
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Description: InGaAs PIN photodiode from 0.9 to 2.05 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.05 µm
Operation Mode:
Photovoltaic
Dark Current:
1.5 to 15 nA
Capacitance:
60 to 150 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
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Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: Inversion Layer Photodiodes
Description: InGaAs PIN photodiode from 0.9 to 2.07 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.07 µm
Operation Mode:
Photovoltaic
Capacitance:
64 to 150 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
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2371 - 2385 of 2551 Photodiodes
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